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| ? 2009 microchip technology inc. ds22139a-page 1 mcp6561/1r/2/4 features ? propagation delay at 1.8v dd : - 56 ns (typical) high to low - 49 ns (typical) low to high ? low quiescent current: 100 a (typical) ? input offset voltage: 3 mv (typical) ? rail-to-rail input: v ss - 0.3v to v dd + 0.3v ? cmos/ttl compatible output ? wide supply voltage range: 1.8v to 5.5v ? available in single, dual, and quad ? packages: sc70-5, sot-23-5, soic, msop, tssop typical applications ? laptop computers ? mobile phones ? hand-held electronics ? rc timers ? alarm and monitoring circuits ? window comparators ? multi-vibrators design aids ? microchip advanced part selector (maps) ? analog demonstration and evaluation boards ? application notes related devices ? open-drain output: mcp6566/6r/7/9 typical application description the microchip technology, inc. mcp6561/1r/2/4 families of cmos/ttl compatible comparators are offered in single, dual, and quad configurations. these comparators are optimized for low power 1.8v, single-supply applications with greater than rail-to-rail input operation. the internal input hysteresis eliminates output switching due to internal input noise voltage, reducing current draw. the push-pull output of the mcp6561/1r/2/4 family supports rail-to-rail output swing, and interfaces with cmos/ttl logic. the output toggle frequency can reach a typical of 4 mhz (typical) while limiting supply current surges and dynamic power consumption during switching. this family operates with single supply voltage of 1.8v to 5.5v while drawing less than 100 a/comparator of quiescent current (typical). package types v in v out mcp656x v dd r 2 r f r 3 v dd mcp6562 +ina -ina v ss 1 2 3 4 8 7 6 5 - outa + - + v dd outb -inb +inb mcp6564 +ina -ina v ss 1 2 3 4 14 13 12 11 - outa + - + v dd outd -ind +ind 10 9 8 5 6 7 outb -inb +inb +inc -inc outc + - - + 5 4 mcp6561 1 2 3 - + 5 4 mcp6561r 1 2 3 - + +in v ss out -in v dd +in v dd out -in v ss sot-23-5, sc70-5 soic, msop sot-23-5 soic, tssop 1.8v low power push-pull output comparator
mcp6561/1r/2/4 ds22139a-page 2 ? 2009 microchip technology inc. notes: ? 2009 microchip technology inc. ds22139a-page 3 mcp6561/1r/2/4 1.0 electrical characteristics 1.1 maximum ratings* v dd - v ss ....................................................................... 6.5v all other inputs and outputs............v ss - 0.3v to v dd + 0.3v difference input voltage ......................................|v dd - v ss | output short circuit current .................................... 25 ma current at input pins .................................................. 2 ma current at output and supply pins .......................... 50 ma storage temperature ................................... -65c to +150c ambient temp. with power applied .............. -40c to +125c junction temp............................................................ +150c esd protection on all pins (hbm/mm) .................. 4 kv/300v *notice: stresses above those listed under ?maximum rat- ings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this spec ification is not implied. expo- sure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical characteristics: unless otherwise indicated: v dd = +1.8v to +5.5v, v ss = gnd, t a = +25c, v in + = v dd /2, v in - = v ss , r l =10k to v dd /2 (see figure 1-1 ). parameters symbol min typ max units conditions power supply supply voltage v dd 1.8 ? 5.5 v quiescent current per comparator i q 60 100 130 a i out = 0 power supply rejection ratio psrr 63 70 ? db v cm = v ss input input offset voltage v os -10 3+10mvv cm = v ss (note 1) input offset drift v os / t? 2?v/cv cm = v ss input offset current i os ? 1? pav cm = v ss input bias current i b ?1 ?pat a = +25c, v in - = v dd /2 ?60 ? pat a = +85c, v in - = v dd /2 ? 1500 5000 pa t a = +125c, v in - = v dd /2 input hysteresis voltage v hyst 1.0 ? 5.0 mv v cm = v ss (notes 1, 2) input hysteresis linear temp. co. tc 1 ?10 ?v/c input hysteresis quadratic temp. co. tc 2 ?0.3 ?v/c 2 common-mode input voltage range v cmr v ss ? 0.2 ? v dd +0.2 v v dd = 1.8v v ss ? 0.3 ? v dd +0.3 v v dd = 5.5v common-mode rejection ratio cmrr 54 66 ? db v cm = -0.3v to v dd +0.3v, v dd = 5.5v 50 63 ? db v cm = v dd /2 to v dd +0.3v, v dd = 5.5v 54 65 ? db v cm = -0.3v to v dd /2, v dd = 5.5v common mode input impedance z cm ?10 13 ||4 ? ||pf differential input impedance z diff ?10 13 ||2 ? ||pf push-pull output high level output voltage v oh v dd ? 0.7 ? ? v i out = -3 ma/-8 ma with v dd = 1.8v/5.5v (note 3) low level output voltage v ol ??0.6 vi out = 3ma/8ma with v dd = 1.8v/5.5v (note 3) short circuit current i sc ?30 ? ma note 3 output pin capacitance c out ?8 ?pf note 1: the input offset voltage is the center of the input-referred trip points. the input hysteres is is the difference between the input-referred trip points. 2: v hyst at different temperatures is estimated using v hyst (t a ) = v hyst @ +25c + (t a - 25c) tc 1 + (t a - 25c) 2 tc 2 . 3: limit the output current to absolute maximum rating of 50 ma. mcp6561/1r/2/4 ds22139a-page 4 ? 2009 microchip technology inc. ac characteristics temperature specifications 1.2 test circuit configuration this test circuit configuration is used to determine the ac and dc specifications. figure 1-1: ac and dc test circuit for the push-pull output comparators. electrical characteristics: unless otherwise indicated: v dd = +1.8v to +5.5v, v ss = gnd, t a = 25c, v in + = v dd /2, v in - = v ss , r l =10k to v dd /2, and c l = 25 pf. (see figure 1-1 ). parameters symbol min typ max units conditions propagation delay high-to-low,100 mv overdrive t phl ?5680 nsv cm = v dd /2, v dd = 1.8v ?3480 nsv cm = v dd /2, v dd = 5.5v low-to-high, 100 mv overdrive t plh ?4980 nsv cm = v dd /2, v dd = 1.8v ?4780 nsv cm = v dd /2, v dd = 5.5v skew 1 t pds ?10? ns output rise time t r ?20? ns fall time t f ?20? ns maximum toggle frequency f tg ?4?mhzv dd = 5.5v ?2?mhzv dd = 1.8v input voltage noise 2 e ni ? 350 ? v p - p 10 hz to 10 mhz note 1: propagation delay skew is defined as: t pds = t plh - t phl . 2: eni is based on spice simulation. electrical characteristics: unless otherwise indicated: v dd = +1.8v to +5.5v and v ss = gnd. parameters symbol min typ max units conditions temperature ranges specified temperature range t a -40 ? +125 c operating temperature range t a -40 ? +125 c storage temperature range t a -65 ? +150 c thermal package resistances thermal resistance, sc70-5 ja ?331? c/w thermal resistance, sot-23-5 ja ?256? c/w thermal resistance, 8l-soic ja ?163? c/w thermal resistance, 8l-msop ja ?206? c/w thermal resistance, 14l-soic ja ?120? c/w thermal resistance, 14l-tssop ja ?100? c/w v dd v ss = 0v 200 k 200 k 200 k 200 k v out v in = v ss 25 pf mcp656x i out ? 2009 microchip technology inc. ds22139a-page 5 mcp6561/1r/2/4 2.0 typical performance curves note: unless otherwise indicated, v dd = +1.8v to +5.5v, v ss = gnd, t a = +25c, v in + = v dd /2, v in ? = gnd, r l = 10 k to v dd /2, and c l = 25 pf. figure 2-1: input offset voltage. figure 2-2: input offset voltage drift. figure 2-3: input vs. output signal, no phase reversal. figure 2-4: input hysteresis voltage. figure 2-5: input hysteresis voltage drift - linear temp. co. (tc1). figure 2-6: input hysteresis voltage drift - quadratic temp. co. (tc2). note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purpose s only. the performance characteristics listed herein are not tested or guaranteed. in so me graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 0% 10% 20% 30% 40% 50% -10-8-6-4-2 0 2 4 6 810 v os (mv) occurrences (%) v dd = 1.8v v cm = v ss avg. = -0.1 mv stdev = 2.1 mv 3588 units v dd = 5.5v v cm = v ss avg. = -0.9 mv stdev = 2.1 mv 3588 units 0% 10% 20% 30% 40% 50% 60% -60 -48 -36 -24 -12 0 12 24 36 48 60 v os drift (v/c) occurrences (%) v cm = v ss avg. = 0.9 v/c stdev = 6.6 v/c 1380 units t a = -40c to +125c -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 time (3 s/div) v out (v) v in - v out v dd = 5.5v v in + = v dd /2 0% 5% 10% 15% 20% 25% 30% 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v hyst (mv) occurrences (%) v dd = 1.8v avg. = 3.4 mv stdev = 0.2 mv 3588 units v dd = 5.5v avg. = 3.6 mv stdev = 0.1 mv 3588 units 0% 10% 20% 30% 40% 50% 60% 02468101214161820 v hyst drift, tc1 (v/c) occurrences (%) 1380 units t a = -40c to 125c v cm = v ss v dd = 5.5v avg. = 10.4 v/c stdev = 0.6 v/c v dd = 1.8v avg. = 12 v/c stdev = 0.6 v/c 0% 10% 20% 30% -0.50 -0.25 0.00 0.25 0.50 0.75 1.00 v hyst drift, tc2 (v/c 2 ) occurrences (%) v dd = 5.5v avg. = 0.25 v/c 2 stdev = 0.1 v/c 2 v dd = 1.8v avg. = 0.3 v/c 2 stdev = 0.2 v/c 2 1380 units t a = -40c to +125c v cm = v ss mcp6561/1r/2/4 ds22139a-page 6 ? 2009 microchip technology inc. note: unless otherwise indicated, v dd = +1.8v to +5.5v, v ss = gnd, t a = +25c, v in + = v dd /2, v in ? = gnd, r l = 10 k to v dd /2, and c l = 25 pf. figure 2-7: input offset voltage vs. temperature. figure 2-8: input offset voltage vs. common-mode input voltage. figure 2-9: input offset voltage vs. common-mode input voltage. figure 2-10: input hysteresis voltage vs. temperature. figure 2-11: input hysteresis voltage vs. common-mode input voltage. figure 2-12: input hysteresis voltage vs. common-mode input voltage. -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 -50 -25 0 25 50 75 100 125 temperature (c) v os (mv) v dd = 1.8v v dd = 5.5v v cm = v ss -4.0 -2.0 0.0 2.0 4.0 -0.3 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 v cm (v) v os (mv) v dd = 1.8v t a = +25c t a = +125c t a = +85c t a = -40c -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v cm (v) v os (mv) v dd = 5.5v t a = -40c t a = +25c t a = +125c t a = +85c 1.0 2.0 3.0 4.0 5.0 -50 -25 0 25 50 75 100 125 temperature (c) v hyst (mv) v dd = 5.0v v dd = 1.8v v cm = v ss 1.0 2.0 3.0 4.0 5.0 -0.3 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 v cm (v) v hyst (mv) v dd = 1.8v t a = +25c t a = +125c t a = +85c t a = -40c 1.0 2.0 3.0 4.0 5.0 -0.5 0.5 1.5 2.5 3.5 4.5 5.5 v cm (v) v hyst (mv) v dd = 5.5v t a = -40c t a = +85c t a = +25c t a = +125c ? 2009 microchip technology inc. ds22139a-page 7 mcp6561/1r/2/4 note: unless otherwise indicated, v dd = +1.8v to +5.5v, v ss = gnd, t a = +25c, v in + = v dd /2, v in ? = gnd, r l = 10 k to v dd /2, and c l = 25 pf. figure 2-13: input offset voltage vs. supply voltage vs. temperature. figure 2-14: quiescent current. figure 2-15: quiescent current vs. common-mode input voltage. figure 2-16: input hysteresis voltage vs. supply voltage vs. temperature. figure 2-17: quiescent current vs. supply voltage vs temperature. figure 2-18: quiescent current vs. common-mode input voltage. -3.0 -2.0 -1.0 0.0 1.0 2.0 3.0 1.5 2.5 3.5 4.5 5.5 v dd (v) v os (mv) t a = -40c t a = +85c t a = +25c t a = +125c 0% 10% 20% 30% 40% 50% 60 70 80 90 100 110 120 130 i q (a) occurrences (%) v dd = 5.5v avg. = 97 a stdev= 4 a 1794 units v dd = 1.8v avg. = 88 a stdev= 4 a 1794 units 60 70 80 90 100 110 120 130 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 v cm (v) i q (a) v dd = 1.8v s weep v in+ ,v in - = v dd /2 sweep v in - ,v in+ = v /2 sweep v in+ ,v in - = v dd /2 sweep v in - ,v in+ = v dd /2 1.0 2.0 3.0 4.0 5.0 1.5 2.5 3.5 4.5 5.5 v dd (v) v hyst (mv) t a = +85c t a = +125c t a = +25c t a = -40c 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v dd (v) i q (a) t a = -40c t a = +25c t a = +85c t a = +125c 60 70 80 90 100 110 120 130 -1.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v cm (v) i q (a) v dd = 5.5v sweep v in+ ,v in - = v dd /2 sweep v in - ,v in+ = v dd /2 mcp6561/1r/2/4 ds22139a-page 8 ? 2009 microchip technology inc. note: unless otherwise indicated, v dd = +1.8v to +5.5v, v ss = gnd, t a = +25c, v in + = v dd /2, v in ? = gnd, r l = 10 k to v dd /2, and c l = 25 pf. figure 2-19: quiescent current vs. toggle frequency. figure 2-20: output headroom vs output current. figure 2-21: low-to-high and high-to- low propagation delays. figure 2-22: short circuit current vs. supply voltage vs. temperature. figure 2-23: output headroom vs output current. figure 2-24: low-to-high and high-to- low propagation delays . 50 100 150 200 250 300 350 400 10 100 1000 10000 100000 100000 0 1e+07 toggle frequency (hz) i q (a) v dd = 1.8v v dd = 5.5v 10 100 1k 10k 100k 1m 10m 100 mv over-drive v cm = v dd /2 r l = open 0db output attenuation 0 200 400 600 800 1000 0.0 3.0 6.0 9.0 12.0 15.0 i out (ma) v ol , v dd - v oh (mv) v dd = 1.8v t a = +125c t a = +85c t a = +25c t a = -40c v ol v ol v dd - v oh 0% 10% 20% 30% 40% 50% 30 35 40 45 50 55 60 65 70 75 80 prop. delay (ns) occurrences (%) v dd = 1.8v 100 mv over-drive v cm = v dd /2 t plh a vg. = 47 ns s tdev= 2 ns 198 units t phl avg. = 54.4 ns stdev= 2 ns 198 units -120 -80 -40 0 40 80 120 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v dd (v) i sc (ma) t a = -40c t a = +85c t a = +125c t a = +25c t a = -40c t a = +125c t a = +85c t a = +25c 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 i out (ma) v ol , v dd - v oh (mv) v dd = 5.5v t a = 125c t a = 85c t a = -40c t a = 125c t a = 25c t a = 125c v ol v dd - v oh 0% 10% 20% 30% 40% 50% 30 35 40 45 50 55 60 65 70 75 80 prop. delay (ns) occurrences (%) v dd = 5.5v 100mv over-drive v cm = v dd /2 t plh avg. = 44.6 ns stdev= 2.7 ns 198 units t phl avg. = 33 ns stdev= 1 ns 198 units ? 2009 microchip technology inc. ds22139a-page 9 mcp6561/1r/2/4 note: unless otherwise indicated, v dd = +1.8v to +5.5v, v ss = gnd, t a = +25c, v in + = v dd /2, v in ? = gnd, r l = 10 k to v dd /2, and c l = 25 pf. figure 2-25: propagation delay skew. figure 2-26: propagation delay vs. supply voltage. figure 2-27: propagation delay vs. common-mode input voltage. figure 2-28: propagation delay vs. temperature. figure 2-29: propagation delay vs. input over-drive. figure 2-30: propagation delay vs. common-mode input voltage. 0% 10% 20% 30% 40% 50% -20 -15 -10 -5 0 5 10 15 20 prop. delay skew (ns) occurrences (%) v dd = 1.8v avg. = -7.3 ns stdev= 0.8 ns 198 units v dd = 5.5v avg. = 11.6 ns stdev= 2 ns 198 units 100 mv over-drive v cm = v dd /2 20 40 60 80 100 120 140 1.52.53.54.55.5 v dd (v) prop. delay (ns) t phl , 10 mv over-drive t plh , 10 mv over-drive t phl , 100 mv over-drive t plh , 100 mv over-drive v cm = v dd /2 20 30 40 50 60 70 80 0.00 0.50 1.00 1.50 2.00 v cm (v) prop. delay (ns) t plh t phl v dd = 1.8v 100 mv over-drive 20 30 40 50 60 70 80 -50 -25 0 25 50 75 100 125 temperature (c) prop. delay (ns) t phl t plh , v dd = 1.8v t phl , v dd = 1.8v 100 mv over-drive v cm = v dd /2 t plh , v dd = 5.5v t phl , v dd = 5.5v 10 60 110 160 210 260 1 10 100 1000 over-drive (mv) prop. delay (ns) t plh , v dd = 1.8v t phl , v dd = 1.8v t plh , v dd = 5.5v t phl , v dd = 5.5v v cm = v dd /2 20 30 40 50 60 70 80 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v cm (v) prop. delay (ns) t plh t phl v dd = 5.5v 100 mv over-drive mcp6561/1r/2/4 ds22139a-page 10 ? 2009 microchip technology inc. note: unless otherwise indicated, v dd = +1.8v to +5.5v, v ss = gnd, t a = +25c, v in + = v dd /2, v in ? = gnd, r l = 10 k to v dd /2, and c l = 25 pf. figure 2-31: propagation delay vs. capacitive load. figure 2-32: input bias curr ent vs. input voltage vs temperature. figure 2-33: common-mode rejection ratio and power supply rejection ratio vs. temperature. figure 2-34: power supply rejection ratio (psrr). figure 2-35: common-mode rejection ratio (cmrr). figure 2-36: common-mode rejection ratio (cmrr). 0.01 0.1 1 10 100 1000 1 10 100 1000 10000 100000 1e+06 capacitive load (nf) prop. delay (s) 0.001 0.01 0.1 1 10 10 1000 v dd = 1.8v, t plh v dd = 1.8v, t phl v dd = 1.8v, t plh v dd = 1.8v, t phl v dd = 1.8v, t plh v dd = 1.8v, t phl v dd = 5.5v, t plh v dd = 5.5v, t phl 100mv over-drive v cm = v dd /2 1e-01 1e+01 1e+03 1e+05 1e+07 1e+09 1e+11 -0.8 -0.6 -0.4 -0.2 0 input voltage (v) input current (a) t a = -40c t a = +85c t a = +125c t a = +25c 0.1p 10p 1n 100n 10 1m 10m 70 72 74 76 78 80 -50 -25 0 25 50 75 100 125 temperature (c) cmrr/psrr (db) v cm = -0.3v to v dd + 0.3v v dd = 5.5v cmrr v cm = v ss v dd = 1.8v to 5.5v psrr input referred 0% 5% 10% 15% 20% 25% 30% -600 -400 -200 0 200 400 600 psrr (v/v) occurrences (%) v cm = v ss avg. = 200 v/v stdev= 94 v/v 3588 units 0% 10% 20% 30% -5-4-3-2-1012345 cmrr (mv/v) occurrences (%) v dd = 1.8v 3588 units v cm = -0.2v to v dd /2 avg. = 0.5 mv stdev= 0.1 mv v cm = v dd /2 to v dd + 0.2v avg. = 0.7 mv stdev= 1 mv v cm = -0.2v to v dd + 0.2v avg. = 0.6 mv stdev= 0.1 mv 0% 10% 20% 30% -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 cmrr (mv/v) occurrences (%) v dd = 5.5v 3588 units v cm = -0.3v to v dd /2 avg. = 0.2 mv stdev= 0.4 mv v cm = v dd /2 to v dd + 0.3v avg. = 0.03 mv stdev= 0.7 mv v cm = -0.3v to v dd + 0.3v avg. = 0.1 mv stdev= 0.4 mv ? 2009 microchip technology inc. ds22139a-page 11 mcp6561/1r/2/4 note: unless otherwise indicated, v dd = +1.8v to +5.5v, v ss = gnd, t a = +25c, v in + = v dd /2, v in ? = gnd, r l = 10 k to v dd /2, and c l = 25 pf. figure 2-37: output jitter vs. input frequency. figure 2-38: input offset current and input bias current vs. temperature. figure 2-39: input offset current and input bias current vs. common-mode input voltage vs temperature. 0.1 1 10 100 1000 10000 100 1000 10000 100000 1000000 1e+07 input frequency (hz) output jitter pk-pk (ns) v dd = 5.5v 100 1k 10k 100k 1m 10m v in+ = 2vpp (sine) 0.1 1 10 100 1000 25 50 75 100 125 temperature (c) i os and i b (pa) i b |i os | 0.001 0.01 0.1 1 10 100 1000 10000 0123456 v cm (v) i os and i b (pa) i b @ t a = i b @ t a = |i os| @ t a = 125c |i os |@ t a = 85c v dd = 5.5v mcp6561/1r/2/4 ds22139a-page 12 ? 2009 microchip technology inc. notes: ? 2009 microchip technology inc. ds22139a-page 13 mcp6561/1r/2/4 3.0 pin descriptions descriptions of the pins are listed in table 3-1 . table 3-1: pin function table 3.1 analog inputs the comparator non-inverting and inverting inputs are high-impedance cmos inputs with low bias currents. 3.2 digital outputs the comparator outputs ar e cmos, push-pull digital outputs. they are designed to be compatible with cmos and ttl logic and are capable of driving heavy dc or capacitive loads. 3.3 power supply (v ss and v dd ) the positive power supply pin (v dd ) is 1.8v to 5.5v higher than the negative power supply pin (v ss ). for normal operation, the other pins are at voltages between v ss and v dd . typically, these parts are used in a single (positive) supply configuration. in this case, v ss is connected to ground and v dd is connected to the supply. v dd will need a local bypass capacitor (typically 0.01 f to 0.1 f) within 2 mm of the v dd pin. these can share a bulk capacitor with nearby analog parts (within 100 mm), but it is not required. mcp6561 mcp6561r mcp6562 mcp6564 symbol description sc70-5, sot-23-5 sot-23-5 msop, soic soic, tssop 1 1 1 1 out, outa digital output (comparator a) 44 2 2v in ?, v ina ? inverting input (comparator a) 33 3 3v in +, v ina + non-inverting input (comparator a) 52 8 4 v dd positive power supply ?? 5 5 v inb + non-inverting input (comparator b) ?? 6 6 v inb ? inverting input (comparator b) ? ? 7 7 outb digital output (comparator b) ? ? ? 8 outc digital output (comparator c) ?? ? 9 v inc ? inverting input (comparator c) ?? ? 10 v inc + non-inverting input (comparator c) 25 411 v ss negative power supply ?? ? 12 v ind + non-inverting input (comparator d) ?? ? 13 v ind ? inverting input (comparator d) ? ? ? 14 outd digital output (comparator d) mcp6561/1r/2/4 ds22139a-page 14 ? 2009 microchip technology inc. notes: ? 2009 microchip technology inc. ds22139a-page 15 mcp6561/1r/2/4 4.0 applications information the mcp6561/1r/2/4 family of push-pull output comparators are fabricated on microchip?s state-of-the- art cmos process. they are suitable for a wide range of high speed applications requiring low power consumption. 4.1 comparator inputs 4.1.1 normal operation the input stage of this family of devices uses three differential input stages in parallel: one operates at low input voltages, one at high input voltages, and one at mid input voltage. with this topology, the input voltage range is 0.3v above v dd and 0.3v below v ss , while providing low offset voltage through out the common mode range. the input offset voltage is measured at both v ss - 0.3v and v dd + 0.3v to ensure proper operation. the mcp6561/1r/2/4 family has internally-set hysteresis v hyst that is small enough to maintain input offset accuracy and large enough to eliminate output chattering caused by the comparator?s own input noise voltage e ni . figure 4-1 depicts this behavior. input off- set voltage (v os ) is the center (average) of the (input- referred) low-high and high-low trip points. input hysteresis voltage (v hyst ) is the difference between the same trip points. figure 4-1: the mcp6561/1r/2/4 comparators? internal hysteresis eliminates output chatter caused by input noise voltage. 4.1.2 input voltage and current limits the esd protection on the inputs can be depicted as shown in figure 4-1 . this structure was chosen to protect the input transistors, and to minimize input bias current (ib). the input esd diodes clamp the inputs when they try to go more than one diode drop below v ss . they also clamp any voltages that go too far above v dd ; their breakdown voltage is high enough to allow normal operation, and low enough to bypass esd events within the specified limits. figure 4-2: simplified analog input esd structures. in order to prevent damage and/or improper operation of these amplifiers, the circuits they are in must limit the currents (and voltages) at the v in + and v in ? pins (see maximum ratings* at the beginning of section 1.0 ?electrical ch aracteristics? ). figure 4-1 shows the recommended approach to protecting these inputs. the internal esd diodes prevent the input pins (v in + and v in ?) from going too far below ground, and the resistors r 1 and r 2 limit the possible current drawn out of the input pin. diodes d 1 and d 2 prevent the input pin (v in + and v in ?) from going too far above v dd . when implemented as shown, resistors r 1 and r 2 also limit the current through d 1 and d 2 . figure 4-3: protecting the analog inputs. it is also possible to connect the diodes to the left of the resistors r 1 and r 2 . in this case, the currents through the diodes d 1 and d 2 need to be limited by some other mechanism. the resistor then serves as in-rush current limiter; the dc current into the input pins (v in + and v in ?) should be very small. -3 -2 -1 0 1 2 3 4 5 6 7 8 time (100 ms/div) output voltage (v) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 input voltage (10 mv/div) v out v in ? v dd = 5.0v hysteresis bond pad bond pad bond pad v dd v in + v ss input stage bond pad v in ? v 1 mcp656x r 1 v dd d 1 r 2 v ss ? (minimum expected v 2 ) 2ma v out v 2 r 2 r 3 d 2 + ? r 1 v ss ? (minimum expected v 1 ) 2ma mcp6561/1r/2/4 ds22139a-page 16 ? 2009 microchip technology inc. a significant amount of cu rrent can flow out of the inputs when the common mode voltage (v cm ) is below ground (v ss ); see figure 2-32 . applications that are high impedance may need to limit the usable voltage range. 4.1.3 phase reversal the mcp6561/1r/2/4 comparator family uses cmos transistors at the input. they are designed to prevent phase inversion when the input pins exceed the supply voltages. figure 2-3 shows an input voltage exceeding both supplies with no resulting phase inversion. 4.2 push-pull output the push-pull output is designed to be compatible with cmos and ttl logic, while the output transistors are configured to give rail-to-ra il output performance. they are driven with circuitry th at minimizes any switching current (shoot-through curr ent from supply-to-supply) when the output is transitioned from high-to-low, or from low-to-high (see figure 2-15 and figure 2-18 for more information). 4.3 externally set hysteresis greater flexibility in select ing hysteresis (or input trip points) is achieved by using external resistors. hyster- esis reduces output chatteri ng when one input is slowly moving past the other. it also helps in systems where it is best not to cycle between high and low states too fre- quently (e.g., air conditioner thermostatic control). output chatter also increases the dynamic supply current. 4.3.1 non-inverting circuit figure 4-4 shows a non-inverting circuit for single- supply applications using just two resistors. the resulting hysteresis diagram is shown in figure 4-5 . figure 4-4: non-inverting circuit with hysteresis for single-supply. figure 4-5: hysteresis diagram for the non-inverting circuit. the trip points for figure 4-4 and figure 4-5 are: equation 4-1: v ref v in v out mcp656x v dd r 1 r f + - v out high-to-low low-to-high v dd v oh v ol v ss v ss v dd v thl v tlh v in v tlh v ref 1 r 1 r f ------- + ?? ?? ?? v ol r 1 r f ------- ?? ?? ?? ? = v thl v ref 1 r 1 r f ------- + ?? ?? ?? v oh r 1 r f ------- ?? ?? ?? ? = v tlh = trip voltage from low to high v thl = trip voltage from high to low ? 2009 microchip technology inc. ds22139a-page 17 mcp6561/1r/2/4 4.3.2 inverting circuit figure 4-6 shows an inverting circuit for single-supply using three resistors. the resulting hysteresis diagram is shown in figure 4-7 . figure 4-6: inverting circuit with hysteresis. figure 4-7: hysteresis diagram for the inverting circuit. in order to determine the trip voltages (v thl and v tlh ) for the circuit shown in figure 4-6 , r 2 and r 3 can be simplified to the thevenin equivalent circuit with respect to v dd , as shown in figure 4-8 . figure 4-8: thevenin equivalent circuit. where: using this simplified circuit, the trip voltage can be calculated using the following equation: equation 4-2: figure 2-20 , and figure 2-23 can be used to determine typical values for v oh and v ol . 4.4 bypass capacitors with this family of comparators, the power supply pin (v dd for single supply) shou ld have a local bypass capacitor (i.e., 0.01 f to 0.1 f) within 2 mm for good edge rate performance. 4.5 capacitive loads reasonable capacitive loads (e.g., logic gates) have little impact on propagation delay (see figure 2-31 ). the supply current increases with increasing toggle frequency ( figure 2-19 ), especially with higher capacitive loads. the output slew rate and propagation delay performance will be reduced with higher capacitive loads. v in v out mcp656x v dd r 2 r f r 3 v dd v out high-to-low low-to-high v dd v oh v ol v ss v ss v dd v tlh v thl v in v 23 v out mcp656x v dd r 23 r f + - v ss r 23 r 2 r 3 r 2 r 3 + ------------------ = v 23 r 3 r 2 r 3 + ------------------ v dd = v thl v oh r 23 r 23 r f + ---------------------- - ?? ?? ?? v 23 r f r 23 r f + --------------------- - ?? ?? + = v tlh v ol r 23 r 23 r f + ---------------------- - ?? ?? ?? v 23 r f r 23 r f + --------------------- - ?? ?? + = v tlh = trip voltage from low to high v thl = trip voltage from high to low mcp6561/1r/2/4 ds22139a-page 18 ? 2009 microchip technology inc. 4.6 pcb surface leakage in applications where low input bias current is critical, pcb (printed circuit board) surface leakage effects need to be considered. surface leakage is caused by humidity, dust or other contamination on the board. under low humidity conditions, a typical resistance between nearby traces is 10 12 . a 5v difference would cause 5 pa of current to flow . this is greater than the mcp6561/1r/2/4 family?s bias current at +25c (1 pa, typical). the easiest way to reduce surface leakage is to use a guard ring around sensitive pins (or traces). the guard ring is biased at the same voltage as the sensitive pin. an example of this type of layout is shown in figure 4-9 . figure 4-9: example guard ring layout for inverting circuit. 1. inverting configuration (figures 4-6 and 4-9): a. connect the guard ring to the non-inverting input pin (v in +). this biases the guard ring to the same reference voltage as the comparator (e.g., v dd /2 or ground). b. connect the inverting pin (v in -) to the input pad without touching the guard ring. 2. non-inverting configuration ( figure 4-4 ): a. connect the non-inverting pin (v in +) to the input pad without touching the guard ring. b. connect the guard ring to the inverting input pin (v in -). 4.7 pcb layout technique when designing the pcb layout it is critical to note that analog and digital signal traces are adequately separated to prevent signal coupling. if the comparator output trace is at close proximity to the input traces then large output voltage changes from, v ss to v dd or visa versa, may couple to the inputs and cause the device output to oscillate. to prevent such oscillation, the output traces must be routed away from the input pins. the sc70-5 and sot-23-5 are relatively immune because the output pin out (pin 1) is separated by the power pin v dd /v ss (pin 2) from the input pin +in (as long as the analog and digital traces remain separated through out the pcb). however, the pinouts for the dual and quad packages (soic, msop, tssop) have out and -in pins (pin 1 and 2) close to each other. the recommended layout for these packages is shown in figure 4-10 . figure 4-10: recommended layout. 4.8 unused comparators an unused amplifier in a quad package (mcp6564) should be configured as shown in figure 4-11 . this circuit prevents the output from toggling and causing crosstalk. it uses the minimum number of components and draws minimal current (see figure 2-15 and figure 2-18 ). figure 4-11: unused comparators. guard ring v ss in- in+ -ina +ina -inb +inb outb outa v ss v dd ? mcp6564 v dd ? + ? 2009 microchip technology inc. ds22139a-page 19 mcp6561/1r/2/4 4.9 typical applications 4.9.1 precise comparator some applications require higher dc precision. an easy way to solve this problem is to use an amplifier (such as the mcp6291) to gain-up the input signal before it reaches the comparator. figure 4-12 shows an example of this approach. figure 4-12: precise inverting comparator. 4.9.2 windowed comparator figure 4-13 shows one approach to designing a windowed comparator. the and gate produces a logic ? 1 ? when the input voltage is between v rb and v rt (where v rt > v rb ). figure 4-13: windowed comparator. 4.9.3 bistable multi-vibrator a simple bistable multi-vibrator design is shown in figure 4-14 . v ref needs to be between the power supplies (v ss = gnd and v dd ) to achieve oscillation. the output duty cycle changes with v ref . figure 4-14: bistable multi-vibrator. v ref v dd v dd r 1 r 2 v out v in v ref mcp6291 mcp656x v rt mcp6562 v rb v in 1/2 mcp6562 1/2 v dd mcp6561 v dd r 1 r 2 r 3 v ref c 1 v out mcp6561/1r/2/4 ds22139a-page 20 ? 2009 microchip technology inc. notes: ? 2009 microchip technology inc. ds22139a-page 21 mcp6561/1r/2/4 5.0 design aids 5.1 microchip advanced part selector (maps) maps is a software tool that helps semiconductor professionals efficiently id entify microchip devices that fit a particular design requirement. available at no cost from the microchip web site at www.microchip.com/ maps, the maps is an overall selection tool for microchip?s product portfolio that includes analog, memory, mcus and dscs. using this tool you can define a filter to sort features for a parametric search of devices and export side-by-side technical comparison reports. helpful links are also provided for data sheets, purchase, and sampling of microchip parts. 5.2 analog demonstration and evaluation boards microchip offers a broad spectrum of analog demonstration and evaluation boards that are designed to help you achieve faster time to market. for a complete listing of these boards and their corresponding user?s guides and technical information, visit the microchip web si te at www.microchip.com/ analogtools. three of our boards that are especially useful are: ? 8-pin soic/msop/tssop/dip evaluation board, p/n soic8ev ? 14-pin soic/tssop/dip evaluation board, p/n soic14ev ? 5/6-pin sot23 evaluation board, p/n vsupev2 5.3 application notes the following microchip application notes are available on the microchip web site at www.microchip.com and are recommended as supplemental reference resources: ? an895, ?oscillator circuit for rtd temperature sensors?, ds00895 mcp6561/1r/2/4 ds22139a-page 22 ? 2009 microchip technology inc. notes: ? 2009 microchip technology inc. ds22139a-page 23 mcp6561/1r/2/4 6.0 packaging information 6.1 package marking information legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 5-lead sc-70 (mcp6561) example: xxnn 5-lead sot-23 (mcp6561, mcp6561r) example: xxnn wa25 bc25 8-lead soic (150 mil) (mcp6562) example: xxxxxxxx xxxxyyww nnn mcp6562 e sn^^0906 256 3 e 8-lead msop (mcp6562) example: xxxxxx ywwnnn 6562e 906256 device code mcp6561t wbnn mcp6561rt wann note: applies to 5-lead sot-23. mcp6561/1r/2/4 ds22139a-page 24 ? 2009 microchip technology inc. package marking information (continued) 14-lead tssop (mcp6564) xxxxxxxx yyww nnn example: mcp6564e 0906 256 14-lead soic (150 mil) (mcp6564) example: xxxxxxxxxx yywwnnn xxxxxxxxxx mcp6564 0906256 e/sl^^ 3 e ? 2009 microchip technology inc. ds22139a-page 25 mcp6561/1r/2/4 !" ! #$! !% # $ !% # $ #&! ! !# "' ( )*+ ) # & #, $ --# $## . # #$ # / ! - 0 # 1 / % # #! # ## +22--- 2 / 3# 44" " 4 # 5 56 7 5$ 8 %1 5 ( 1# 9()* 6, : # ; < !!1 / / ; < # ! %% < 6, =!# " ; !!1 / =!# " ( ( ( 6, 4# ; ( . #4# 4 9 4 ! / ; < 9 4 !=!# 8 ( < d b 1 2 3 e1 e 4 5 ee c l a1 aa2 - *9 ) mcp6561/1r/2/4 ds22139a-page 26 ? 2009 microchip technology inc. ! !" ! #$! !% # $ !% # $ #&! ! !# "' ( )*+ ) # & #, $ --# $## . # #$ # / ! - 0 # 1 / % # #! # ## +22--- 2 / 3# 44" " 4 # 5 56 7 5$ 8 %1 5 ( 4 !1# ()* 6$# !4 !1# )* 6, : # < ( !!1 / / ; < # ! %% < ( 6, =!# " < !!1 / =!# " < ; 6, 4# < . #4# 4 < 9 . # # 4 ( < ; . # > < > 4 ! / ; < 9 4 !=!# 8 < ( n b e e1 d 1 2 3 e e1 a a1 a2 c l l1 - * ) ? 2009 microchip technology inc. ds22139a-page 27 mcp6561/1r/2/4 " # $%## 1 , $ !&% #$ , 08$# $ #8 #!-# # # ! !" ! #$! !% # $ !% # $ #&! ( ! !# "' ( )*+ ) # & #, $ --# $## ".+ % 0$ $ -# $## 0% % # $ . # #$ # / ! - 0 # 1 / % # #! # ## +22--- 2 / 3# 44" " 4 # 5 56 7 5$ 8 %1 5 ; 1# 9()* 6, : # < < !!1 / / ( ;( ( # ! %% < ( 6, =!# " )* !!1 / =!# " )* 6, 4# )* . #4# 4 9 ; . # # 4 (". . # > < ;> 4 ! / ; < 4 !=!# 8 < d n e e1 note 1 1 2 e b a a1 a2 c l1 l - * ) mcp6561/1r/2/4 ds22139a-page 28 ? 2009 microchip technology inc. " & '(!)* +,- 1 , $ !&% #$ , 08$# $ #8 #!-# # # ! ?% #* # # !" ! #$! !% # $ !% # $ #&! ( ! !# "' ( )*+ ) # & #, $ --# $## ".+ % 0$ $ -# $## 0% % # $ . # #$ # / ! - 0 # 1 / % # #! # ## +22--- 2 / 3# 44" " 4 # 5 56 7 5$ 8 %1 5 ; 1# )* 6, : # < < ( !!1 / / ( < < # ! %% ? < ( 6, =!# " 9)* !!1 / =!# " )* 6, 4# )* * % @ # a ( < ( . #4# 4 < . # # 4 ". . # > < ;> 4 ! / < ( 4 !=!# 8 < ( ! %# (> < (> ! %#) ## (> < (> d n e e e1 note 1 12 3 b a a1 a2 l l1 c h h - *() ? 2009 microchip technology inc. ds22139a-page 29 mcp6561/1r/2/4 " & '(!)* +,- 1 , $ !&% #$ , 08$# $ #8 #!-# # # ! ?% #* # # !" ! #$! !% # $ !% # $ #&! ( ! !# "' ( )*+ ) # & #, $ --# $## ".+ % 0$ $ -# $## 0% % # $ . # #$ # / ! - 0 # 1 / % # #! # ## +22--- 2 / 3# 44" " 4 # 5 56 7 5$ 8 %1 5 ; 1# )* 6, : # < < ( !!1 / / ( < < # ! %% ? < ( 6, =!# " 9)* !!1 / =!# " )* 6, 4# )* * % @ # a ( < ( . #4# 4 < . # # 4 ". . # > < ;> 4 ! / < ( 4 !=!# 8 < ( ! %# (> < (> ! %#) ## (> < (> d n e e e1 note 1 12 3 b a a1 a2 l l1 c h h - *() mcp6561/1r/2/4 ds22139a-page 30 ? 2009 microchip technology inc. ./ & '(!)* +,- 1 , $ !&% #$ , 08$# $ #8 #!-# # # ! ?% #* # # !" ! #$! !% # $ !% # $ #&! ( ! !# "' ( )*+ ) # & #, $ --# $## ".+ % 0$ $ -# $## 0% % # $ . # #$ # / ! - 0 # 1 / % # #! # ## +22--- 2 / 3# 44" " 4 # 5 56 7 5$ 8 %1 5 1# )* 6, : # < < ( !!1 / / ( < < # ! %%? < ( 6, =!# " 9)* !!1 / =!# " )* 6, 4# ;9()* * % @ # a ( < ( . #4# 4 < . # # 4 ". . # > < ;> 4 ! / < ( 4 !=!# 8 < ( ! %# (> < (> ! %#) ## (> < (> note 1 n d e e1 1 23 b e a a1 a2 l l1 c h h - *9() ? 2009 microchip technology inc. ds22139a-page 31 mcp6561/1r/2/4 . # #$ # / ! - 0 # 1 / % # #! # ## +22--- 2 / mcp6561/1r/2/4 ds22139a-page 32 ? 2009 microchip technology inc. ./ 0 0 $ &/)/+, 1 , $ !&% #$ , 08$# $ #8 #!-# # # ! !" ! #$! !% # $ !% # $ #&! ( ! !# "' ( )*+ ) # & #, $ --# $## ".+ % 0$ $ -# $## 0% % # $ . # #$ # / ! - 0 # 1 / % # #! # ## +22--- 2 / 3# 44" " 4 # 5 56 7 5$ 8 %1 5 1# 9()* 6, : # < < !!1 / / ; ( # ! %% ( < ( 6, =!# " 9)* !!1 / =!# " ( !!1 / 4# ( ( . #4# 4 ( 9 ( . # # 4 ". . # > < ;> 4 ! / < 4 !=!# 8 < note 1 d n e e1 1 2 e b c a a1 a2 l1 l - *;) ? 2009 microchip technology inc. ds22139a-page 33 mcp6561/1r/2/4 appendix a: revision history revision a (march 2009) ? original release of this document. mcp6561/1r/2/4 ds22139a-page 34 ? 2009 microchip technology inc. notes: ? 2009 microchip technology inc. ds22139a-page 35 mcp6561/1r/2/4 product identification system to order or obtain information, e.g., on pricing or de livery, refer to the factory or the listed sales office . device: mcp6561t: single comparator (tape and reel) (sc70, sot-23) mcp6561rt: single comparator (tape and reel) (sot-23 only) mcp6562: dual comparator mcp6562t: dual comparator(tape and reel) mcp6564: quad comparator mcp6564t: quad comparator(tape and reel) temperature range: e = -40 c to +125 c package: lt = plastic small outline transistor (sc70), 5-lead ot = plastic small outline transistor, 5-lead ms = plastic micro small outline transistor, 8-lead sn = plastic small outline transistor, 8-lead st = plastic thin shrink small outline transistor, 14-lead sl = plastic small outline transistor, 14-lead part no. x /xx package temperature range device examples: a) mcp6561t-e/lt: tape and reel, extended temperature, 5ld sc-70 package. b) mcp6561t-e/ot: tape and reel extended temperature, 5ld sot-23 package. a) mcp6561rt-e/ot: tape and reel extended temperature, 5ld sot-23 package. a) mcp6562-e/ms: extended temperature 8ld msop package. b) mcp6562-e/sn: extended temperature 8ld soic package. a) mcp6564t-e/sl: tape and reel extended temperature 14ld soic package. b) mcp6564t-e/st: tape and reel extended temperature 14ld tssop package. ? mcp6561/1r/2/4 ds22139a-page 36 ? 2009 microchip technology inc. notes: ? 2009 microchip technology inc. ds22139a-page 37 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, accuron, dspic, k ee l oq , k ee l oq logo, mplab, pic, picmicro, picstart, rfpic, smartshunt and uni/o are registered trademarks of microchip te chnology incorporated in the u.s.a. and other countries. filterlab, linear active thermistor, mxdev, mxlab, seeval, smartsensor and the embedded control solutions company are registered tradema rks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, a pplication maestro, codeguard, dspicdem, dspicdem.net, dspicworks, dsspeak, ecan, economonitor, fansense, in-circuit serial programming, icsp, icepic, mindi, miwi, mpasm, mplab certified logo, mplib, mplink, mtouch, nanowatt xlp, pickit, picdem, picdem.net, pictail, pic 32 logo, powercal, powerinfo, powermate, powertool, real ice, rflab, select mode, total endurance, tsharc, wiperlock and zena are trademarks of microchip te chnology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2009, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip pr oducts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona; gresham, oregon and design centers in california and india. the company?s quality system processes and procedures are for its pic ? mcus and dspic ? dscs, k ee l oq ? code hopping devices, serial eeproms, microperi pherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified. ds22139a-page 38 ? 2009 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: http://support.microchip.com web address: www.microchip.com atlanta duluth, ga tel: 678-957-9614 fax: 678-957-1455 boston westborough, ma tel: 774-760-0087 fax: 774-760-0088 chicago itasca, il tel: 630-285-0071 fax: 630-285-0075 cleveland independence, oh tel: 216-447-0464 fax: 216-447-0643 dallas addison, tx tel: 972-818-7423 fax: 972-818-2924 detroit farmington hills, mi tel: 248-538-2250 fax: 248-538-2260 kokomo kokomo, in tel: 765-864-8360 fax: 765-864-8387 los angeles mission viejo, ca tel: 949-462-9523 fax: 949-462-9608 santa clara santa clara, ca tel: 408-961-6444 fax: 408-961-6445 toronto mississauga, ontario, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific asia pacific office suites 3707-14, 37th floor tower 6, the gateway harbour city, kowloon hong kong tel: 852-2401-1200 fax: 852-2401-3431 australia - sydney tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing tel: 86-10-8528-2100 fax: 86-10-8528-2104 china - chengdu tel: 86-28-8665-5511 fax: 86-28-8665-7889 china - hong kong sar tel: 852-2401-1200 fax: 852-2401-3431 china - nanjing tel: 86-25-8473-2460 fax: 86-25-8473-2470 china - qingdao tel: 86-532-8502-7355 fax: 86-532-8502-7205 china - shanghai tel: 86-21-5407-5533 fax: 86-21-5407-5066 china - shenyang tel: 86-24-2334-2829 fax: 86-24-2334-2393 china - shenzhen tel: 86-755-8203-2660 fax: 86-755-8203-1760 china - wuhan tel: 86-27-5980-5300 fax: 86-27-5980-5118 china - xiamen tel: 86-592-2388138 fax: 86-592-2388130 china - xian tel: 86-29-8833-7252 fax: 86-29-8833-7256 china - zhuhai tel: 86-756-3210040 fax: 86-756-3210049 asia/pacific india - bangalore tel: 91-80-3090-4444 fax: 91-80-3090-4080 india - new delhi tel: 91-11-4160-8631 fax: 91-11-4160-8632 india - pune tel: 91-20-2566-1512 fax: 91-20-2566-1513 japan - yokohama tel: 81-45-471- 6166 fax: 81-45-471-6122 korea - daegu tel: 82-53-744-4301 fax: 82-53-744-4302 korea - seoul tel: 82-2-554-7200 fax: 82-2-558-5932 or 82-2-558-5934 malaysia - kuala lumpur tel: 60-3-6201-9857 fax: 60-3-6201-9859 malaysia - penang tel: 60-4-227-8870 fax: 60-4-227-4068 philippines - manila tel: 63-2-634-9065 fax: 63-2-634-9069 singapore tel: 65-6334-8870 fax: 65-6334-8850 taiwan - hsin chu tel: 886-3-6578-300 fax: 886-3-6578-370 taiwan - kaohsiung tel: 886-7-536-4818 fax: 886-7-536-4803 taiwan - taipei tel: 886-2-2500-6610 fax: 886-2-2508-0102 thailand - bangkok tel: 66-2-694-1351 fax: 66-2-694-1350 europe austria - wels tel: 43-7242-2244-39 fax: 43-7242-2244-393 denmark - copenhagen tel: 45-4450-2828 fax: 45-4485-2829 france - paris tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany - munich tel: 49-89-627-144-0 fax: 49-89-627-144-44 italy - milan tel: 39-0331-742611 fax: 39-0331-466781 netherlands - drunen tel: 31-416-690399 fax: 31-416-690340 spain - madrid tel: 34-91-708-08-90 fax: 34-91-708-08-91 uk - wokingham tel: 44-118-921-5869 fax: 44-118-921-5820 w orldwide s ales and s ervice 03/26/09 |
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